Beschreibung
InhaltsangabeSilicon Properties.- Junctions and Contacts.- The Bipolar Transistor.- The MOS Structure.- Insulated-Gate Field-Effect Transistor.- Analog Devices and Passive Components.- Enabling Processes and Integration.- Applications.
Leseprobe
Leseprobe
Inhalt
Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime.- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors.- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects.- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications.- Parasitic effects.
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Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
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DE 69121 Heidelberg
